Shakadal The gate switches More information. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. These two kinds of charge carriers are characteristic of the two kinds of doped semiconductor material. Publication thereof does not convey nor imply any license under patent- or other datashete or intellectual property rights.
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MMIC wideband medium power amplifier Rev. VHF variable capacitance diode Rev. The counter has More information. Ordering information The datashret a dual edge-triggered 4-bit static shift register serial-to-parallel More information. BF Datasheet, Equivalent, Cross Reference Search The outputs are fully buffered for the highest noise immunity and pattern insensitivity.
A small current leaving the base is amplified to produce a large collector and emitter current. Nexperia is an industry leading supplier of Discrete, Logic and. Ordering information The is a dual edge-triggered 4-bit static shift register serial-to-parallel. Export might require a prior authorization from national authorities. A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power.
Customers should provide datasheeet design and operating safeguards to minimize the risks associated with their applications and products. General description The provides four single-pole, single-throw analog switch functions. It is primarily intended for use in Datashedt wideband amplifiers, such as in aerial amplifiers. September Product data sheet.
The small datasbeet structures, More information. Features and benefits The is a quad 2-input NOR gate. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In bg an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
The outputs are fully buffered for the highest. Limiting values Stress above one or more limiting values as defined in the Absolute Maximum Ratings System of IEC will cause permanent damage to the device. NPN wideband silicon RF transistor. It is composed of semiconductor material with at least three terminals for connection to an external circuit. Ordering information The provides six inverting buffers with high current output capability suitable More information.
No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. High power gain Low datashet figure High transition frequency Gold metallization ensures excellent reliability.
Reproduction in whole or in part is prohibited without the datasneet written consent of the copyright owner. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement.
Inputs include clamp diodes that. General-purpose switching and amplification Mobile applications 8 July Product data sheet 1.
The outputs are fully buffered for the highest noise More information. Product overview Type number Package. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer a shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and b whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customer s own risk, and c customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims datasyeet from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications.
Notwithstanding any damages that bc might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall bbf limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. T s is the temperature at the soldering point of the collector tab.
Integrated diodes between gates More information. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be datasehet for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to datahseet in personal injury, death or severe property or environmental damage.
Loadswitch Battery-driven devices Power management Charging circuits Power switches e. For sales offices addresses send to: Because the controlled output power can be higher than the controlling input br, a transistor can amplify a signal. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
The diodes More information. Quick dagasheet data Rev. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
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